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top-gate/bottom-contact organic field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

titanium

Type Single Compound
Formula Ti
Role buffer layer
4

gold

Type Single Compound
Formula Au
Role source bottom electrode
5

gold

Type Single Compound
Formula Au
Role drain bottom electrode
6

F4-BDOPV microwire

Type Nano Material
Formula
Role channels
7

aluminium

aluminum
Type Single Compound
Formula Al
Role gate electrode
8

CTL809M

Cytop
Type Polymer
Formula
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source
electron mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • gold
  • silicon
See all (4)
Product

top-gate/bottom-contact organic field-effect transistor

References

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