Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

MoS2 field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

degenerately doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role semiconductor layer
5

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
6

niobium-doped molybdenum disulfide

Nb-doped MoS2
Type
Formula Nb0.005Mo0.995S2
Role
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role source
9

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on temperature

4 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

MoS2 field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

MoS2 field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

MoS2 field effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial