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GaN-thin-film-based metal-oxide-semiconductor high-electron-mobility transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon carbide

carborundum
Type
Formula SiC
Role
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role nucleation layer
3

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
4

aluminium nitride

aluminum nitride
Type
Formula AlN
Role
5

aluminium gallium nitride

aluminum gallium nitride Al0.25Ga0.75N AlGaN
Type Single Compound
Formula Al0.25Ga0.75N
Role barrier layer
6

titanium

Type
Formula Ti
Role
7

aluminium

aluminum
Type
Formula Al
Role
8

nickel

Type
Formula Ni
Role
9

gold

Type Single Compound
Formula Au
Role source
10

gold

Type Single Compound
Formula Au
Role drain
11

few-layer hexagonal boron nitride nanosheets

hexagonal boron nitride multilayer few-layer h-BN nanosheets h-BN multilayer hBN multilayer
Type
Formula
Role
12

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
13

nickel

Type Single Compound
Formula Ni
Role adhesion layer
14

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

References

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