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long-channel Schottky n-type metal oxide-semiconductor field effect transistors

Based on

1 Articles
2016 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

indium(III) phosphide

indium phosphide
Type
Formula InP
Role
3

Ge/Au/Ni

Type Nano Material
Formula
Role source
4

Ge/Au/Ni

Type Nano Material
Formula
Role drain
5

zirconium(IV) oxide

zirconium dioxide zirconia
Type
Formula ZrO2
Role
6

nickel

Type Single Compound
Formula Ni
Role gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • indium(III) phosphide
Product

long-channel Schottky n-type metal oxide-semiconductor field effect transistors

References

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