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back-gated field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer molybdenum sulfide film

MoS2 film
Type Nano Material
Formula
Role channel layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. Yu4T8c
  2. sxXu8ggaM7Fgnrsra1lBrH1fKUQ
  3. rN2Vmk7TBiO3nbqFe
  4. Lp7RcpiHFTXSiMNb9HXMkAho
Product

back-gated field effect transistor

References

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