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back-gated field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer molybdenum sulfide film

MoS2 film
Type Nano Material
Formula
Role channel layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. kM5tmQ
  2. AQWad11owA0No3nvPh3VC9CnPZS
  3. TLooVzCZ15kdPmV9V
  4. ViQKn8BqkV6ibJ1vc3A52ugE
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. iqCRvT
  2. r0SFZh2DcIxfWv6ZwYHU4fqhpPi
  3. NjmfatsF2LxAZ6frh
  4. pKPhkOp0wfbbwq1I5z8ZGeS
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. J4eYak
  2. aQmq8f6m0yjphkBArJUgxdYWefj
  3. sbl2kPUefpFSr2MLA
  4. ShjeFgCGkdo9yKyA7AHxOro
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. L1jAoe
  2. LS2NL1m5oZq63k5DTRDSelHHze5
  3. dO0lnxdb7u9wKpvNs
  4. qdLf69HvqFW3u2fmHiYFeVTZ
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

References

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