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back-gated field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer molybdenum sulfide film

MoS2 film
Type Nano Material
Formula
Role channel layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. mIIlOT
  2. kOm3dHzuzj7HkJzTdOiih4CsAgd
  3. hOQpBNjMxh5OGKnzX
  4. JTCV4Vo1MWLWYDJwNdKdYh3q
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. rrU0Z0
  2. jv5xrfarocC2BMnRv9pS5rK3mtr
  3. DKznrGJ8j7lDGqVVS
  4. 3nnh6ghzx0OPeEtoiul1GOT
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. h8DoIN
  2. aG2tSCMz0ye2jrwLYKc1W36gIrs
  3. 9aEZB1JKSdiyXT2vh
  4. HPlDpEpbi88KRq6mOLmmkSq
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/Si
  • molybdenum
  1. SPQ8P1
  2. tV9jC8xJF0uhZ2prXXjonhvpwNR
  3. fXjNQTqYnZ8ddrBC3
  4. wige2Zb1FE3s5Jb2Kzk6RDR4
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

References

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