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thin HgSe CQD film-based dual gated transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role bottom-gate electrode
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

chromium

Type Single Compound
Formula Cr
Role electrodes
4

gold

Type Single Compound
Formula Au
Role electrodes
5

As2S3-capped HgSe CQD

Type Nano Material
Formula
Role semiconductor layer
6

poly(ethylene glycol)

poly(ethylene oxide) polyethylene glycol polyethylene oxide polyoxyethylene PEG PEO POE
Type Polymer
Formula
Role gate dielectrics
7

polymer electrolyte

Type Complex Compound
Formula
Role electrolytes
8

copper

Type Single Compound
Formula Cu
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
bottom gate current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  1. SPmAjakIv5uSGZAMznCs2g65
Product

thin HgSe CQD film-based dual gated transistor

Size: not specified

Medium/Support: none

References

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