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black phosphorus metal-oxide-semiconductor field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium-palladium layer

titanium/palladium film Ti/Pd film
Type Nano Material
Formula
Role bottom electrode
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
5

few-layer black phosphorus flakes

black phosphorus nanoflakes few-layer BP flakes few-layer BP BP NS
Type Nano Material
Formula
Role semiconductor layer
6

titanium-gold layer

Ti/Au film
Type Nano Material
Formula
Role source
7

titanium-gold layer

Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

black phosphorus metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

black phosphorus metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

black phosphorus metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
Product

black phosphorus metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
Product

black phosphorus metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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