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n-ZnO nanorods/p-GaN heterojunction light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

Mg-doped CaN

p-type CaN p-GaN
Type Complex Compound
Formula
Role hole transport layer
4

zinc oxide (wurtzite)

wurtzite zinc oxide zinc oxide wurtzite
Type
Formula ZnO
Role
5

ZnO wurtzite nanorods

ZnO nanorods ZnO NR
Type Nano Material
Formula
Role electron transport layer
6

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role
7

Ni/indium-tin-oxide

Ni/ITO
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Mg-doped CaN
  • gallium nitride
  • sapphire
Product

n-ZnO nanorods/p-GaN heterojunction light-emitting diode

References

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