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ferroelectric-gate field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role flexible substrate
2

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
3

poly(4-vinyl phenol)

Type Polymer
Formula
Role gate dielectrics
4

poly(vinylidene fluoride-trifluoroethylene) film

PVDF-TrFE film
Type Nano Material
Formula
Role ferroelectric gate insulator
5

6,13-bis((triisopropylsilyl)ethynyl)pentacene

6,13-bis(2-triisopropylsilylethynyl)pentacene 6,13-bis-(triisopropylsilylethynyl) pentacene 6,13-bis(tri-isopropylsilylethynyl)pentacene 6,13-bis(triisopropylsilylethynyl) pentacene 6,13-Bis(triisopropylsilylethynyl)pentacene 6,13-bis(triisopropylsilylethynyl)pentacene bis(triisopropylsilylethynyl)pentacene TIPS Pentacene TIPS pentacene TIPS-Pentacene TIPS-pentacene TIPS-PEN TIPS-P5 TIPS-Pc TIPS-Pn
Type Single Compound
Formula C44H54Si2
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on sharp folding

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. dTTDXmk
  2. ZaKATJqFqB
Product

ferroelectric-gate field effect transistor

Size: not specified

Medium/Support: none

References

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