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Bi2Se3-based device with Co/MgO/graphene contacts

Based on

1 Articles
2014 Most recent source

Composition

1

nitrogen-doped silicon carbide

N-doped SiC n-SiC
Type Complex Compound
Formula
Role substrate
2

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
3

bismuth(III) selenide

bismuth selenide Bi2Se3
Type Single Compound
Formula Bi2Se3
Role topological insulators
4

magnesium oxide/graphene film

MgO/graphene film
Type Nano Material
Formula
Role tunnel barrier layer
5

titanium

Type Single Compound
Formula Ti
Role seed layer
6

cobalt

Type Single Compound
Formula Co
Role ferromagnetic contact
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role contacts
9

silicon nitride

Type Single Compound
Formula Si3N4
Role isolation layer

Properties

General physical and chemical properties

Property Value Source
anisotropic magnetoresistance of ferromagnetic contact

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • nitrogen-doped silicon carbide
  1. 6N47SoJUQDZ8
Product

Bi2Se3-based device with Co/MgO/graphene contacts

References

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