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Ge/Si nanowire-based transistor

Based on

1 Articles
2014 Most recent source

Composition

1

Si/SiO2 substrate

Type Complex Compound
Formula
Role substrate
2

chromium

Type Single Compound
Formula Cr
Role adhesion layer
3

nickel

Type Single Compound
Formula Ni
Role source
4

nickel

Type Single Compound
Formula Ni
Role drain
5

Ge/Si core/shell nanowire

Ge/Si nanowire
Type Nano Material
Formula
Role channels
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
7

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
8

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
9

chromium

Type Single Compound
Formula Cr
Role adhesion layer
10

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source
threshold voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  1. E2B5
Product

Ge/Si nanowire-based transistor

References

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