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ferroelectric-gate field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role flexible substrate
2

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
3

poly(4-vinyl phenol)

Type Polymer
Formula
Role gate dielectrics
4

poly(vinylidene fluoride-trifluoroethylene) film

PVDF-TrFE film
Type Nano Material
Formula
Role ferroelectric gate insulator
5

dicyanomethylene-substituted quinoidal quaterthiophene derivative

QQT(CN)4
Type Single Compound
Formula C46H56N4S4
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
chopped voltage-induced drain current dependent on deformation pretreatment

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. bh15apr
  2. noe5n7j31T
Product

ferroelectric-gate field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. 2LBk2Ru
  2. j5FXJm9gWq
Product

ferroelectric-gate field effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. 4V2VaN9
  2. Bepi4pXTJ8
Product

ferroelectric-gate field effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. 6M7yP9P
  2. KaTlYJRcMD
Product

ferroelectric-gate field effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • polyimide
  1. d0O0Mdp
  2. iMTEqin3CE
Product

ferroelectric-gate field effect transistor

References

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