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Mo end-contacted quasiballistic SWNT transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role gate dielectrics
4

single-walled carbon nanotubes

single walled carbon nanotubes single-walled carbon nanotube single walled carbon nanotube single-wall carbon nanotubes single-wall carbon nanotube carbon nanotubes SWCNT SWNT CNT
Type Nano Material
Formula
Role channels
5

molybdenum

Type Single Compound
Formula Mo
Role source
6

molybdenum

Type Single Compound
Formula Mo
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • silicon hydride
  • nitrogen
  1. wx80h
Product

Mo end-contacted quasiballistic SWNT transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • silicon hydride
  • nitrogen
  1. C3VWs
Product

Mo end-contacted quasiballistic SWNT transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • silicon hydride
  • nitrogen
  1. y8imP
Product

Mo end-contacted quasiballistic SWNT transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • silicon hydride
  • nitrogen
  1. acTby
Product

Mo end-contacted quasiballistic SWNT transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • silicon hydride
  • nitrogen
  1. OGxJp
Product

Mo end-contacted quasiballistic SWNT transistor

Size: not specified

Medium/Support: none

References

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