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hybrid nanophotonic-chalcogenide circuit

Based on

5 Articles
2016 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
2

silicon nitride

Type
Formula Si3N4
Role
3

GST film

Type
Formula
Role
4

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
attenuation coefficient

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
sensor for spin

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
Product

hybrid nanophotonic-chalcogenide circuit

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon nitride
  1. HW8MyVyYqI0CUDrwUOsaqiRO1qxPwH
Product

hybrid nanophotonic-chalcogenide circuit

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon nitride
  1. ggO2Pzr9Y3Gr5cLV3hmYc02HSH7z6w
Product

hybrid nanophotonic-chalcogenide circuit

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon nitride
  1. G92BcjwHD2GSc6VpcJw1FHPeUUzH9h
Product

hybrid nanophotonic-chalcogenide circuit

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  1. M1P1hn4M1XjHlz
Product

hybrid nanophotonic-chalcogenide circuit

Size: not specified

Medium/Support: none

References

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