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ITO/Alq3/Au/Alq3/Ag organic non-volatile memory device

Based on

1 Articles
2014 Most recent source

Composition

1

amorphous silicon dioxide

amorphous silicic oxide amorphous silica
Type Single Compound
Formula SiO2
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role anode
3

tris(8-hydroxyquinolinato)aluminium

tris(8-hydroxyquinoline)aluminum 8-hydroxyquinoline aluminum salt aluminum 8-hydroxyquinolinate Alq3 Alq3
Type Single Compound
Formula C27H18AlN3O3
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role charge-trapping layer
5

silver

Type Single Compound
Formula Ag
Role cathode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tris(8-hydroxyquinolinato)aluminium
  • indium tin oxide covered quartz glass
Product

ITO/Alq3/Au/Alq3/Ag organic non-volatile memory device

Size: not specified

Medium/Support: none

References

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