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NDI(2OD)(4tBuPh)-DTYM2-based n-channel organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectric layer
3

octadecyltrichlorosilane monolayer

OTS monolayer OTS film
Type
Formula
Role
4

NDI(2OD)(4tBuPh)-DTYM2

Type
Formula C53H55N5O4S4
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for ammonia

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • trichloro(octadecyl)-silane
  • n-doped Si
  1. gmHlvI
Product

NDI(2OD)(4tBuPh)-DTYM2-based n-channel organic field-effect transistor

Size: not specified

Medium/Support: none

References

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