Loading ...

carbon nanotube top-gate transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role bottom gate insulator
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain
5

P3DDT-SWNT network

Type
Formula
Role
6

P(VDF-TrFE-CTFE)

Type Polymer
Formula
Role top gate dielectric
7

gold

Type Single Compound
Formula Au
Role top gate electrode
8

highly doped silicon

Type Complex Compound
Formula
Role bottom-gate electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on bottom gate bias

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • highly doped silicon
Product

carbon nanotube top-gate transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial