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SWNT-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

Type Complex Compound
Formula
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

platinum

Type Single Compound
Formula Pt
Role source
4

platinum

Type Single Compound
Formula Pt
Role drain
5

regular arrays of semiconducting single-walled carbon nanotubes

densely packing enriched s-SWNT SWNT rafts
Type Nano Material
Formula
Role conducting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain-source voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

SWNT-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • p-type Si
Product

SWNT-based field-effect transistor

Size: not specified

Medium/Support: none

References

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