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hybrid-CMOS inverter device

Based on

1 Articles
2015 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role source
2

8,16-dihydrobenzo[a]benzo[6,7]indolo[2,3-h]carbazole

heptazole
Type Single Compound
Formula C26H16N2
Role p-channel
3

poly(1,1,2,4,4,5,5,6,7,7-decafluoro-3-oxa-1,6-heptadiene)

CYTOP
Type
Formula
Role
4

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate insulator
5

gold

Type Single Compound
Formula Au
Role gate
6

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
7

poly(1,1,2,4,4,5,5,6,7,7-decafluoro-3-oxa-1,6-heptadiene)

CYTOP
Type Polymer
Formula
Role buffer layer
8

MoS2 nanoflake

Type Nano Material
Formula
Role n-channel
9

titanium

Type Single Compound
Formula Ti
Role adhesion layer
10

gold

Type Single Compound
Formula Au
Role gate
11

boro-aluminosilicate glass

Type Complex Compound
Formula
Role substrate
12

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on semiconductor type

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

hybrid-CMOS inverter device

Size: not specified

Medium/Support: none

References

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