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poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)-based bottom-gate/bottom-contact organic thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate contact
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

trichloro(dodecyl)silane

dodecyltrichlorosilane trichlorododecylsilane DDTS DTS TDS SA
Type
Formula C12H25Cl3Si
Role
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene) film

PDBPyBT film
Type Nano Material
Formula
Role semiconductor layer
7

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
current on to off ratio

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped Si
Product

poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)-based bottom-gate/bottom-contact organic thin film transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped Si
Product

poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-alt-2,2`-bithiophene)-based bottom-gate/bottom-contact organic thin film transistor

References

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