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MoS1.70Se0.30-based FET

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

molybdenum sulfide selenide film

MoS1.70Se0.30 film
Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
source-drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
  • molybdenum(IV) selenide
  1. 2f633V9IKN
  2. MI254schO93H9v9y3ksI9afW188IaUTafntLi1fpsFikkLk2g7Wjo
Product

MoS1.70Se0.30-based FET

References

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