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PDPPBTT(1)-SVS(9)-based organic thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type
Formula C18H37Cl3Si
Role
4

poly[2,5-bis(7-decylnonadecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-2,2'-bithieno[3,2-b]thiophene]-co-[2,5-bis(7-decylnonadecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-(1,2-bis(5-(thiophen-2-yl)selenophen-2-yl)ethene)]

PDPPBTT(1)-SVS(9)
Type Polymer
Formula
Role dielectric buffer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility dependent on solvent of synthesis

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

PDPPBTT(1)-SVS(9)-based organic thin-film transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

PDPPBTT(1)-SVS(9)-based organic thin-film transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

PDPPBTT(1)-SVS(9)-based organic thin-film transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

PDPPBTT(1)-SVS(9)-based organic thin-film transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
Product

PDPPBTT(1)-SVS(9)-based organic thin-film transistor

References

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