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entangled-light-emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role substrate
2

aluminium gallium arsenide

aluminum gallium arsenide
Type
Formula Al0.75Ga0.25As
Role
3

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot example of QD InAs QD layer InAs QD
Type
Formula
Role
4

indium gallium arsenide

Type Single Compound
Formula In0.23Ga0.77As
Role strain-relaxing layer
5

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula AsGa
Role
6

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Source
Bell parameter

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Applications

Area Application Source
telecommunication

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium gallium arsenide
  • low temperature gallium arsenide
Product

entangled-light-emitting diode

References

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