Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

t-Bu-modified silicon nanowire-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role substrate
2

4-amino-3,3-dimethylbutyl triethoxysilane-modified silicon nanowires

t-Bu-modified SiNW
Type Nano Material
Formula
Role semiconductor layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

titanium/palladium/titanium trilayer

Ti/Pd/Ti trilayer Ti/Pd/Ti film
Type Nano Material
Formula
Role drain
6

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer
7

gold

Type Single Compound
Formula Au
Role gate

Properties

Sensor properties

Type of sensor Sensor property Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • crystalline silicon
  1. fdG4hoRFapw5pK6KI8bHjfe3oIWLbBuBZfAqblL8NofiD8lya
Product

t-Bu-modified silicon nanowire-based field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial