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zinc oxide-decorated silicon nanowire-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role substrate
2

zinc oxide nanoparticle-decorated silicon nanowires

ZnO NP-decorated SiNW ZnO-decorated SiNW
Type Nano Material
Formula
Role semiconductor layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

titanium/palladium/titanium trilayer

Ti/Pd/Ti trilayer Ti/Pd/Ti film
Type Nano Material
Formula
Role drain
6

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer
7

gold

Type Single Compound
Formula Au
Role gate

Properties

Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for acetone peroxide in 0.1% DMSO aqueous solution

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • crystalline silicon
  1. 6FzC7LbS510cGI7t2K915peDeNYU8ZJ6B362ztW2usO8SOhLJ
Product

zinc oxide-decorated silicon nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

References

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