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boron nitride-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

highly doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

monolayer hexagonal boron nitride sheets

single-layer hexagonal boron nitride hexagonal boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride nanosheet honeycomb boron nitride monolayer hexagonal boron nitride sheets boron nitride nanosheets hexagonal boron nitride monolayer BN nanosheets honeycomb BN monolayer monolayer h-BN sheets h-BN nanosheets h-BN monolayer hBN nanosheets monolayer h-BN white graphene h-BN nanosheet BN nanosheets monolayer hBN hBN nanosheet hBN monolayer hexagonal BN h-BN sheets h-BN hBN
Type Nano Material
Formula
Role conducting layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

boron nitride-based field-effect transistor

References

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