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MoS2-based field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

heavily p-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

MoS2 multilayer

Type
Formula
Role
4

10 nm thick titanium/100 nm thick gold layer

Ti/Au (10 nm/100 nm) layer Au/Ti
Type Nano Material
Formula
Role source
5

10 nm thick titanium/100 nm thick gold layer

Ti/Au (10 nm/100 nm) layer Au/Ti
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
conductance dependent on beam fluence

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

MoS2-based field effect transistor

References

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