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MoS2, WSe2-based ternary inverter

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
4

molybdenum(IV) sulfide

molybdenum disulfide
Type
Formula MoS2
Role
5

tungsten(IV) selenide

tungsten diselenide
Type
Formula WSe2
Role
6

gold

Type
Formula Au
Role
7

palladium

Type
Formula Pd
Role
8

palladium

Type
Formula Pd
Role

Properties

General physical and chemical properties

Property Value Source
drain current dependent on WSe<sub>2</sub> FET/heterojunction FET domain

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

MoS2, WSe2-based ternary inverter

References

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