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p-i-n GaAs diode incorporating GaAs/Al0.3Ga0.7As quantum wells a

Based on

1 Articles
2014 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role substrate
2

n-type GaAs

Type
Formula
Role
3

n-type GaAs/Al0.3Ga0.7As quantum wells

Type
Formula
Role
4

i-GaAs

Type
Formula
Role
5

p-type GaAs

Type
Formula
Role
6

Ge/Au/Ni/Au

Type Complex Compound
Formula
Role n-type ohmic contact
7

Au/Zn/Au

Type Complex Compound
Formula
Role p-type ohmic contact

Properties

General physical and chemical properties

Property Value Source
a.c.-coupled thermal emission power

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Applications

Area Application Source
analysis methods

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Characterization

Method Source
infrared spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-type GaAs
  • n-type GaAs
  • low temperature gallium arsenide
See all (5)
Product

p-i-n GaAs diode incorporating GaAs/Al0.3Ga0.7As quantum wells a

References

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