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Schottky diode

Based on

1 Articles
2014 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role substrate
2

n+-GaAs

Type Complex Compound
Formula
Role buffer layer
3

i-GaAs

Type
Formula
Role
4

indium(III) arsenide

Type
Formula
Role
5

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role barrier
6

indium(III) arsenide

Type
Formula
Role
7

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
8

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type
Formula Ga0.7Al0.3As
Role
9

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type
Formula GaAs
Role
10

titanium

Type Single Compound
Formula Ti
Role adhesion layer
11

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n+-GaAs
  • low temperature gallium arsenide
Product

Schottky diode

References

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