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ITO-coated-PET/HfO2/DAE SAM/pentacene/gold field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

ITO-coated-PET

Type Complex Compound
Formula
Role substrate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role bottom dielectric
3

diarylethene phosphonic acid film

DAE phosphonic acid film
Type Nano Material
Formula
Role tunneling dielectric
4

pentacene

PEN Pen Pc Pe
Type Single Compound
Formula C22H14
Role semiconductor layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

n-octadecylylphosphonic acid

n-octadecylphosphonic acid octadecanylphosphonic acid octadecyl phosphonic acid octadecylphosphonic acid C18-PA OD-PA ODPA OPA
Type
Formula C18H39O3P
Role

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium tetrachloride
  • ITO-coated-PET
  • water
  1. am5K
  2. iv7c2ROEQ60arhD
Product

ITO-coated-PET/HfO2/DAE SAM/pentacene/gold field-effect transistor

References

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