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multi-layered GeS field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

GeS nanosheets

Type Nano Material
Formula
Role channels
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for visible monochrome light

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
See all (5)
  1. zQtMsgqMphSwUmrsnyNiDHW
Product

multi-layered GeS field-effect transistor

Size: not specified

Medium/Support: none

References

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