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MoS2, WSe2-based heterojunction field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
4

few-layer molybdenum(IV) sulfide monolayer

quadruple-layer molybdenum disulfide film multilayered molybdenum disulfide few-layer molybdenum(IV) sulfide few-layer molybdenum disulfide four-layer MoS2 nanosheets few-layered MoS2 crystals few-layer MoS2 nanosheets quadruple-layer MoS2 film few-layer MoS2 monolayer layered MoS2 2D material few-layer MoS2 crystals four-layer MoS2 flakes few-layer MoS2 flakes two-dimensional MoS2 few-layers of MoS2 3L MoS2 nanoflakes multilayered MoS2 4-monolayer MoS2 MoS2 nanosheets multilayer MoS2 four-layer MoS2 few-layer MoS2 MoS2 crystals MoS2 flakes
Type
Formula
Role
5

few-layer WSe2

Type
Formula
Role
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

MoS2, WSe2-based heterojunction field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

MoS2, WSe2-based heterojunction field-effect transistor

Size: not specified

Medium/Support: none

References

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