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4-mercaptobenzoic acid/ hexylphosphonic acid-coated lead(II) selenide nanocrystals-based field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

4-mercaptobenzoic acid/hexylphosphonic acid-coated lead(II) selenide nanocrystals

Type Nano Material
Formula
Role channel layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain-source current dependent on air exposure time

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • gold
  • silicon
See all (4)
  1. BOLG7dovohXVaRTISeMke
Product

4-mercaptobenzoic acid/ hexylphosphonic acid-coated lead(II) selenide nanocrystals-based field effect transistor

References

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