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high mobility bottom gate nanocrystalline-Si thin-film transistor

Based on

1 Articles
2011 Most recent source

Composition

1

quartz

Type
Formula SiO2
Role
2

chromium layer

chromium film Cr
Type
Formula
Role
3

SiO2 film

Type
Formula
Role
4

nanocrystalline-silicon thin film

nc-Si film
Type
Formula
Role
5

silicon dioxide insulation layer

30 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2
Type
Formula
Role
6

n+-doped nanocrystalline silicon film

n+ nc-Si film
Type
Formula
Role
7

chromium layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • quartz
Product

high mobility bottom gate nanocrystalline-Si thin-film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • quartz
Product

high mobility bottom gate nanocrystalline-Si thin-film transistor

References

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