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back gated multilayer InSe transistor

Based on

6 Articles
2014 Most recent source

Composition

1

p-Si

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type
Formula
Role
4

InSe nanosheets

Type
Formula
Role
5

chromium

Type
Formula Cr
Role
6

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Catalytic properties

Reaction Value Nanomaterial Variant Source
dopamine oxidation

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon-rich silicon nitride
  • p-doped silicon
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • n-silicon
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • doped silicon
  1. 5ZhVvxFRRjl9SqDXM0zfHVDIyOWf9j
  2. cSEBAio0cB9
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • doped silicon
  1. ZoZe6rrb944yciUAIAnyqOiHHGnqSp
  2. nLS2ahAG5CS
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

References

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