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back gated multilayer InSe transistor

Based on

6 Articles
2014 Most recent source

Composition

1

n-type silicon

Type
Formula
Role
2

HfO2 layer

Type
Formula
Role
3

germanium-silicon germanium core-shell nanowires

Ge-Si0.5Ge0.5 core-shell nanowires Ge-Si0.5Ge0.5 core-shell NW
Type
Formula
Role
4

tantalum(III) nitride

tantalum nitride
Type
Formula TaN
Role
5

boron

Type
Formula B
Role
6

nickel film

Ni layer Ni film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Catalytic properties

Reaction Value Nanomaterial Variant Source
dopamine oxidation

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

Size: not specified

Medium/Support: none

References

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