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silicon nanowires aligned pattern-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

highly doped p-type silicon

Type Complex Compound
Formula
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

boron-doped p-type silicon nanowires

boron-doped p-type SiNW
Type Nano Material
Formula
Role Ohmic contacts
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
8

biodecorated single gap-bearing silicon@silica core-shell nanowires

biodecorated Si/SiO2 NW
Type Nano Material
Formula
Role semiconductor layer

Properties

Sensor properties

Type of sensor Sensor property Source
compounds sensor for H1N1 virus in microfluidics

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

silicon nanowires aligned pattern-based field-effect transistor

References

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