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dual-gate organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly[{2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo[3,4-c]pyrrole-1,4-diyl}-alt-{[2,2'-(1,4-phenylene)bisthiophene]-5,5'-diyl}]

PDPPTPT
Type Polymer
Formula
Role semiconductors
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

Cytop

Type Polymer
Formula
Role gate dielectrics
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role upper gate
8

titanium

Type Single Compound
Formula Ti
Role adhesion layer

Properties

General physical and chemical properties

Property Value Source
drain current dependent on top gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

dual-gate organic field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

dual-gate organic field-effect transistor

References

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