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plasmon zinc oxide field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

boron-doped silicon

B-doped Si Si:B
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-doped zinc oxide

n-ZnO
Type Complex Compound
Formula
Role channel layer
4

chromium-gold bilayer

Cr/Au
Type Complex Compound
Formula
Role source
5

chromium-gold bilayer

Cr/Au
Type Complex Compound
Formula
Role drain
6

gold nanoparticles

Au nanoparticles gold NP Au NP AuNP GNP
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
external quantum efficiency dependent on gate voltage bias

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
  • oxygen
Product

plasmon zinc oxide field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
  • oxygen
Product

plasmon zinc oxide field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
  • oxygen
Product

plasmon zinc oxide field-effect transistor

Size: not specified

Medium/Support: none

References

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