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DNBDT-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

1H,1H,2H,2H-perfluorodecyltriethoxysilane moiety

heptadecafluorodecyltrimethoxysilane moiety perfluorodecyltriethoxysilane moiety perfluorodecylsiloxy PFDTS moiety FDTS moiety PFTS moiety
Type
Formula -C10F21O3Si-
Role
4

DNBDT thin film

Type
Formula
Role
5

2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane

2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane tetrafluoro-7,7,8,8-tetracyanoquinodimethane tetrafluoro-tetracyano-quinodimethane tetrafluoro tetracyanoquinodimethane tetrafluoro-tetracyanoquinodimethane F4-TCNQ F4-TCNQ F4TCNQ F4TCNQ
Type
Formula C12F4N4
Role
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  1. 4rx9w
  2. Q3SBGYyz1A9BBX
Product

DNBDT-based field-effect transistor

References

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