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poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluoro-1-octyl)silane

3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl(triethoxy)silane (tridecafluoro-1,1,2,2-tetrahydrooctyl)triethoxysilane tridecafluoro-1,1,2,2-tetrahydrooctyltriethoxysilane triethoxy(1H,1H,2H,2H-tridecafluoro-n-octyl)silane triethoxy-1H,1H,2H,2H-tridecafluoro-n-octylsilane triethoxy(1H,1H,2H,2H-perfluoro-1-octyl)silane 1H,1H,2H,2H-perfluoro-octyltriethoxysilane 1H,1H,2H,2H-perfluorooctyltriethoxysilane tridecafluorooctyltriethoxysilane perfluorooctyltriethoxysilane fluoroalkylsilane Dynasylan® F8261 FAS-13 PFOTES F-SAM F8261 PFTS PTES FAS
Type Single Compound
Formula C14H19F13O3Si
Role anti-trapping layer
4

poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film

PB16TTT thin film
Type Nano Material
Formula
Role active layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluoro-1-octyl)silane
  • Si with SiO2 layer
Product

poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film transistor

Size: not specified

Medium/Support: none

References

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