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vertically integrated multiple channel-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

boron p-doped silicon

boron-doped silicon
Type Complex Compound
Formula
Role substrate
2

silicon nanowires

SiNW
Type Nano Material
Formula
Role channels
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

polycrystalline silicon

poly silicon poly-silicon polysilicon silicon poly-Si pc-Si p-Si Si
Type Single Compound
Formula Si
Role gate
5

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role source
6

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role drain
7

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

References

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