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freestanding artificial synapses based on oxide-based electric-double-layer transistor on flexible chitosan membrane

Based on

1 Articles
2015 Most recent source

Composition

1

chitosan

Type Biomolecule
Formula
Role gate dielectrics
2

indium zinc oxide film

IZO film
Type Nano Material
Formula
Role channel layer
3

indium zinc oxide

IZO
Type Complex Compound
Formula
Role source
4

indium zinc oxide

IZO
Type Complex Compound
Formula
Role drain
5

indium zinc oxide

IZO
Type Complex Compound
Formula
Role gate
6

indium zinc oxide

IZO
Type Complex Compound
Formula
Role gate
7

indium zinc oxide

IZO
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on bending-flattening cycle number

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • chitosan
  1. j6rdyQIXsCyQDI9GXH8c
  2. nJCvdwczgpSKwjkdxpKX6EMxph028VdtDb
Product

freestanding artificial synapses based on oxide-based electric-double-layer transistor on flexible chitosan membrane

Size: not specified

Medium/Support: none

References

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