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MoS2/AlOx/TiOPc-covered graphene interlayer FET

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene

Type Nano Material
Formula
Role bottom channel
4

titanyl phthalocyanine

titanylphthalocyanine TiOPc
Type
Formula C32H16N8OTi
Role
5

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role interlayer dielectric layer
6

Cr/Au

Type Complex Compound
Formula
Role source
7

Cr/Au

Type Complex Compound
Formula
Role drain
8

bilayered MoS2 nanosheet

molybdenum sulfide flake bilayer MoS2 nanosheet bilayer MoS2 flake MoS2 flake
Type Nano Material
Formula
Role top channel

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

MoS2/AlOx/TiOPc-covered graphene interlayer FET

References

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