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back gated multilayer InSe transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-Si

Type
Formula
Role
2

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
3

methyl methacrylate resin

methyl methacrylate resin PMMA
Type
Formula
Role
4

InSe nanosheets

Type
Formula
Role
5

chromium

Type
Formula Cr
Role
6

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back gated multilayer InSe transistor

References

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