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poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

decyltrimethoxysilane

DecTMS DTMS
Type Single Compound
Formula C13H30O3Si
Role anti-trapping layer
4

poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film

PB16TTT thin film
Type Nano Material
Formula
Role active layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • decyltrimethoxysilane
  • Si with SiO2 layer
Product

poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] thin film transistor

References

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