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indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium-gallium-zinc oxide/tin oxide nanowires nanostructure

a-IGZO/(aligned-SnO2-NW) nanostructure
Type Nano Material
Formula
Role channels
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. oiylKIu7hzy67UPxf4mo2U7WE7Got
  2. vs3
  3. asAb399AqWuatxc9P
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. pLKHQAanfiZVOrpX6JlZhDG9FAXrx
  2. efo
  3. tRv3FmESDEFiYUuY6
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. kRiryi6xBMB1i527D8rwxHXXyDiix
  2. tKT
  3. oY5aQh1ILwDCfmcz7
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. nG5Jr5MGMgkA2PkUW7PRRPr79297d
  2. w6g
  3. CqvIMiw7qDPWL5rcr
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) nitrate
  • indium(III) nitrate
  • zinc acetate
  1. 5HOMQemRwJZYKj50A27mhQ9HchRzc
  2. A7T
  3. I1Vd14RCZz3HUEHGX
Product

indium-gallium-zinc oxide/tin oxide nanowires composite thin-film transistor

Size: not specified

Medium/Support: none

References

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