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PbS quantum dot field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Ti/Au film

Type Nano Material
Formula
Role source
4

Ti/Au film

Type Nano Material
Formula
Role drain
5

1,2-ethanedithiol-stabilized PbS colloidal quantum dots

1,2-ethanedithiol-capped PbS colloidal quantum dots 1,2-ethanedithiol-capped lead sulfide quantum dots 1,2-ethanedithiol-coated lead sulfide quantum dots 1,2-ethanedithiol-capped PbS quantum dots 1,2-ethanedithiol-coated PbS quantum dots lead sulfide quantum dots capped with EDT lead sulfide colloidal quantum dots 1,2-ethanedithiol-capped PbS QD EDT treated PbS quantum dots ethanedithiol-capped PbS QD PbS colloidal quantum dots lead sulfide quantum dots EDT-stabilized PbS CQD PbS QD capped with EDT EDT-exchanged PbS CQD EDT-capped PbS CQD EDT-capped PbS QD PbS nanocrystals PbS quantum dots EDT PbS CQD PbS QD-EDT PbS CQD CQD-EDT PbS QD
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Source
dark current

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • degenerately doped silicon with covering oxide
Product

PbS quantum dot field effect transistor

References

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