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charge-trap flash-memory oxide thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
3

PAE

Type Single Compound
Formula C22H26BrN4O5P
Role gate dielectrics
4

10 mol% Cu-doped ZrO2

Type Complex Compound
Formula
Role charge-trapping layer
5

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
6

PAE

Type Single Compound
Formula C22H26BrN4O5P
Role gate dielectrics
7

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
8

indium sesquioxide

indium(III) oxide indium trioxide indium oxide
Type Single Compound
Formula In2O3
Role conducting channel
9

aluminium

aluminum
Type Single Compound
Formula Al
Role source
10

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on cycle number

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

References

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